ASM’s Post

𝐀𝐬 𝐬𝐞𝐦𝐢𝐜𝐨𝐧𝐝𝐮𝐜𝐭𝐨𝐫 𝐝𝐞𝐯𝐢𝐜𝐞𝐬 𝐜𝐨𝐧𝐭𝐢𝐧𝐮𝐞 𝐭𝐨 𝐬𝐡𝐫𝐢𝐧𝐤, 𝐞𝐯𝐞𝐧 𝐬𝐦𝐚𝐥𝐥 𝐚𝐦𝐨𝐮𝐧𝐭𝐬 𝐨𝐟 𝐩𝐥𝐚𝐬𝐦𝐚-𝐢𝐧𝐝𝐮𝐜𝐞𝐝 𝐜𝐡𝐚𝐫𝐠𝐢𝐧𝐠 𝐜𝐚𝐧 𝐛𝐞𝐜𝐨𝐦𝐞 𝐚 𝐜𝐨𝐧𝐜𝐞𝐫𝐧. Our recent study evaluated MKS Toroidal Remote Plasma Sources and their ability to deliver neutral radical reactants while limiting potentially damaging charged species at the wafer surface. Using an industry-standard wafer charging monitor, MKS Paragon® and R*evolution® Remote Plasma Sources demonstrated no detectable charge flux under the standard operating conditions tested. Explore the carousel to learn how MKS Toroidal RPS technology helps support charge-sensitive semiconductor applications by delivering neutral chemistry with minimal charge exposure. For additional details on the methodology, testing conditions, and results, download the complete White Paper. https://ow.ly/YicF50Zs416 #semiconductor

A precision current sink uses an op-amp, MOSFET, transistor, and sensing resistor to produce a controlled output current. The op-amp compares the input voltage with the feedback voltage and adjusts the MOSFET drive to maintain the required current. For the ideal circuit, the output current is approximately Iout = Vin/R. This approach provides stable current, good linearity, and high precision, making it useful in precision analog circuits, current sources, and test equipment.

A precision current sink uses an op-amp, MOSFET, transistor, and sensing resistor to produce a controlled output current. The op-amp compares the input voltage with the feedback voltage and adjusts the MOSFET drive to maintain the required current. For the ideal circuit, the output current is approximately Iout = Vin/R. This approach provides stable current, good linearity, and high precision, making it useful in precision analog circuits, current sources, and test equipment.

Dual Input Balanced Output Differential Amplifier: In the given Dual Input Balanced Output Differential Amplifier circuit, two input signals vin1 and vin2 are applied to the bases B1 and B2 of transistors Q1 and Q2.

Researchers expand twistronics limits by pushing twist angles further than ever in oxide electronics where layers are chemically bonded, opening a route to larger, more practical moiré patterns https://lnkd.in/d-fBk4kb #Twistronics #Moiré #OxideElectronics #MaterialsScience

How does a transistor like its coffee? Strongly doped, with just enough gate bias to wake up. Coffee and transistors share the exact same operational logic 😀: both need a specific kick to start working, and both can suffer from serious leakage if you mess up the power levels. Same works if you are a tea or a chai person!! For the detail-oriented 😇 1. "Strongly Doped" (Carrier Concentration) In semiconductor physics, doping introduces specific impurities (such as Boron or Phosphorus) into the intrinsic silicon lattice to drastically increase free carrier concentration and electrical conductivity. Without doping, pure silicon acts essentially as an insulator and remains functionally inert. 2. "Gate Bias" (Threshold Voltage, Vth) In a standard MOSFET, three main terminals i.e. Source, Drain, and Gate - control device operation (alongside the Substrate/Bulk). Current cannot flow across the channel from Source to Drain until the applied Gate voltage meets or exceeds the Threshold Voltage (Vth), forming the inversion layer to switch the channel "ON." 3. Non-Ideal Effects & Parasitics: Subthreshold Leakage: Even when Vgs < Vth, small subthreshold currents still trickle through the channel, leading to static power dissipation while idling. Thermal Runaway & Dynamic Power: Over-biasing or over-clocking spikes dynamic power consumption elevating channel temperatures and potentially forcing thermal throttling or device degradation. Over-Doping & Carrier Mobility: Excessively high dopant concentration increases ionized impurity scattering, which degrades overall carrier mobility and increases noise across the conduction path. #Semiconductors #ChipDesign #VLSI #EngineeringHumor #DevicePhysics #ElectricalEngineering #TechHumor #Friday #TechJokes

How do you stack performance without growing the physical size of advanced semiconductor devices? Wafer bonding is one of the key technologies making it possible. By enabling the precise joining of multiple wafers, it opens the door to 3D integration, improved device density, and enhanced performance across applications such as MEMS, photonics, and advanced packaging. With the right bonding approach whether direct, anodic, or thermo-compression manufacturers can achieve strong, reliable interfaces while meeting strict requirements in terms of alignment, temperature, and material compatibility. WaferExport's bonding services combine technical expertise and process control to meet the exact standards your applications demand. Curious to see how wafer bonding can support your applications? Get in touch with us or explore our solutions here: https://lnkd.in/ehgpGeuc

For many years, Figure of Merit was close enough to get away with. Rdson × Qg gave you one number to rank MOSFETs, and on silicon you could mostly get away with it; not because it was right, but because the things it ignored stayed small. Wide-bandgap changed that - and not by making FOM less accurate. It makes it rank the wrong devices to the top. Here is why. FOM quietly assumes the silicon world: conduction and gate charge dominate, output-capacitance loss is small, frequencies are low. SiC and GaN break every part of that: 1. Gate charge compresses, so Qg stops discriminating; you are ranking on Rdson alone. 2. Output-capacitance loss (Eoss) moves from second order to one of the largest terms in a fast converter. FOM has no term for it. 3.) Reverse recovery now varies wildly between technologies. FOM still ignores it. FOM was never truly correct, not even on silicon. It was just close enough to get away with, because the terms it ignored were small. Wide-bandgap removes that slack - and you cannot patch it, because one scalar assumes a fixed hierarchy of what matters, and wide-bandgap changes that hierarchy with your frequency and topology. The fix is the analysis FOM was always a stand-in for: the losses that actually apply, at your real operating point. That used to be too expensive to run across thousands of parts. It is not anymore. Full write-up here: https://lnkd.in/gaARV-XT

Discover how U-Precision, a leading semiconductor manufacturer, benefits from Renishaw’s TONiC™ optical #encoders with steel tape scales: ✅ Minimal thermal errors in scales ✅ Excellent signal stability ✅ Fine resolutions down to 1 nanometer Read the full story 👉 https://bit.ly/36Xpwzr #renishaw #applyinnovation #semiconductor #industrialautomation #motioncontrol

If you are researching advanced electronics and materials and are performing IV testing, check out the latest article from Lake Shore Cryotronics. The new M81-SMU-10 Source Measure Module has many features that can help you with your measurements: https://lnkd.in/eT7QDwTt