Markus Behet

GaN value chain players are gearing up for prime time – In particular GaN on Si technology became the focal point for innovations in power switching, RF power for 5G and sensor applications. As high-volume, large diameter and low cost manufacturing solutions for GaN on Si are becoming available today, EpiGaN is ready to provide optimized GaN epiwafer solutions up to 200mm on Si and 150mm on SiC for multiple target applications.

In this webtalk Dr. Markus Behet, EpiGaN CMO, discusses… Mehr anzeigen

GaN value chain players are gearing up for prime time – In particular GaN on Si technology became the focal point for innovations in power switching, RF power for 5G and sensor applications. As high-volume, large diameter and low cost manufacturing solutions for GaN on Si are becoming available today, EpiGaN is ready to provide optimized GaN epiwafer solutions up to 200mm on Si and 150mm on SiC for multiple target applications.

In this webtalk Dr. Markus Behet, EpiGaN CMO, discusses the company’s latest GaN technology developments for 600V power switching and RF power for 5G. These latest product generations offer lowest RF losses and dispersion effects utilizing AlN/GaN HEMTs with in-situ SiN passivation on large diameter epiwafers that enable best-in class device performance. Weniger anzeigen

Is GaN on Si the enabling technology that will also fuel next generation RF applications like 5G, IOT and displace the incumbent Si and GaAs technologies? You can certainly believe so as GaN on Si RF technology reached performance levels still out of reach a few years back.

Is GaN on Si the enabling technology that will also fuel next generation RF applications like 5G, IOT and displace the incumbent Si and GaAs technologies? You can certainly believe so as GaN on Si RF technology reached performance levels that were still out of reach a few years back. GaN on Si technology has already made inroads as a disruptive technology for 600V power management systems and furthermore fueled many new applications like LIDAR for Autonomous Vehicles, augmented reality and… Mehr anzeigen

Is GaN on Si the enabling technology that will also fuel next generation RF applications like 5G, IOT and displace the incumbent Si and GaAs technologies? You can certainly believe so as GaN on Si RF technology reached performance levels that were still out of reach a few years back. GaN on Si technology has already made inroads as a disruptive technology for 600V power management systems and furthermore fueled many new applications like LIDAR for Autonomous Vehicles, augmented reality and sensor applications- and there is definitely more to come. This presentation will highlight recent advances for EpiGaN’s GaN/Si and GaN/SiC epi wafer technologies for RF applications and discuss the differentiating advantages of in-situ SiN capped AlN barrier for RF power. Weniger anzeigen

Can GaN-on-silicon move on from just serving 600 V and below power management systems, wireless charging and LIDAR, to win deployment in next-generation RF applications, such as 5G and the Internet of Things? This article provides proof that GaN-on-Si technology is primed for RF power!

Invited Presenation at Semicon China 2017 in Shanghai

Invited Presentation at International Compound Semiconductor Conference in Brussels/Belgium

Invited Presentation at International Conference in Frankfurt